Datasheet4U Logo Datasheet4U.com

IRF423 - N-Channel Power MOSFETs

This page provides the datasheet information for the IRF423, a member of the IRF420 N-Channel Power MOSFETs family.

Datasheet Summary

Description

2.2A and 2.5A, 450V and 500V rDS(ON)= 3-Ofi and 4.0Q SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device These are N-Channel enhancement mode

📥 Download Datasheet

Datasheet preview – IRF423

Datasheet Details

Part number IRF423
Manufacturer NJS
File Size 136.58 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF423 Datasheet
Additional preview pages of the IRF423 datasheet.

📁 Similar Datasheet

  • IRF423 - N-Channel Power MOSFET (ART CHIP)
  • IRF423 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF423 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF423 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF423 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF420 - N-Channel Power MOSFET (ART CHIP)
  • IRF420 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF420 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF420 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF420 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by NJS
  • IRF420 - N-Channel Power MOSFETs
  • IRF421 - N-Channel Power MOSFETs
  • IRF422 - N-Channel Power MOSFETs

Full PDF Text Transcription

Click to expand full text
^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 IRF420, IRF421, FAX: (973) 376-8960 IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Features Description • 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
Published: |