IRF423 Overview
Key Specifications
Max Operating Temp: 150 °C
Description
2.2A and 2.5A, 450V and 500V - rDS(ON)= 3-Ofi and 4.0Q - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
