IRF423 Description
2.2A and 2.5A, 450V and 500V rDS(ON)= 3-Ofi and 4.0Q SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of...
IRF423 Key Features
- 2.2A and 2.5A, 450V and 500V
- rDS(ON)= 3-Ofi and 4.0Q
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device