Datasheet Summary
^E.mL-don.du.cio'i Lpioducti, Line.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE; (973) 376-2922
(212) 227-6005
IRF420, IRF421, FAX: (973) 376-8960
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
Description
- 2.2A and 2.5A, 450V and 500V
- rDS(ON)= 3-Ofi and 4.0Q
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown...
