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IRF420 - N-Channel Power MOSFETs

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Description

2.2A and 2.5A, 450V and 500V rDS(ON)= 3-Ofi and 4.0Q SOA is Power Dissipation Limited Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Majority Carrier Device These are N-Channel enhancement mode

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Datasheet Details

Part number IRF420
Manufacturer NJS
File Size 136.58 KB
Description N-Channel Power MOSFETs
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^E.mL-don.du.cio'i Lpioducti, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE; (973) 376-2922 (212) 227-6005 IRF420, IRF421, FAX: (973) 376-8960 IRF422, IRF423 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Features Description • 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
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