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^E.mL-don.du.cio'i Lpioducti, Line.
20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE; (973) 376-2922
(212) 227-6005
IRF420, IRF421, FAX: (973) 376-8960
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
Features
Description
• 2.2A and 2.5A, 450V and 500V • rDS(ON)= 3-Ofi and 4.0Q
• SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
IRF420 Datasheet
