NJS IRF420
This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.| Part No. | IRF420 |
|---|---|
| Datasheet | IRF420 Download |
| Manufacturer |  NJS |
| Description | N-Channel Power MOSFETs |
| Buy | Stock & Price |
FEATURES
DESCRIPTION
● 2.2A and 2.5A, 450V and 500V● rDS(ON)= 3-Ofi and 4.0Q
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
● Related Literature Ordering Information Symbol 9D PART NUMBER PACKAGE BRAND IRF420 TO-204AA IRF420 IRF421 TO-204AA IRF421 IRF422 TO-204AA IRF422 IRF423 TO-204AA IRF423 NOTE: When ordering, use the entire part number. Packaging DRAIN...
