IRF420 Datasheet | NJS

Features Description - 2.2A and 2.5A, 450V and 500V - r DS(ON)= 3-Ofi and 4.0Q - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Majority Carrier Device These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. - Related Literature Ordering Information Symbol 9D PART NUMBER PACKAGE BRAND TO-204AA IRF421 TO-204AA IRF421 IRF422 TO-204AA IRF422 IRF423 TO-204AA IRF423 NOTE: When ordering, use the entire part number. Packaging DRAIN (FLANGE) JEDEC TO-204AA GATE (PIN 1) SOURCE (PIN 2) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors IRF420, IRF421, IRF422, IRF423 Absolute Maximum Ratings Tc =25°c Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) - .Vnq Drain to Gate Voltage (Res = 20k£2) (Note 1 ) . . . .-...