IRF540NPBF Datasheet
IRF540NPBF Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc N-Channel Mosfet Transistor INCHANGE Semiconductor IRF540NPBF ·FEATURES ·Drain Current ID= 33A@ TC=25℃ ·Static Drain-Source On-Resistance : RDS(on) = 44mΩ(Max) ·Fast Switching Speed ·Minimum Lot.
*Drain Current ID= 33A@ TC=25℃
*Static Drain-Source On-Resistance
: RDS(on) = 44mΩ(Max)
*Fast Switching Speed
*Minimum Lot-to-Lot variations for robust device performance
and reliable operation
*DESCRITION
*Designed especially for high voltage,high speed applications,
such as off-line switching pow.
IRF540NPBF Datasheet (International Rectifier)
International Rectifier
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi.
GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resis.