IRFB4410 Datasheet and Specifications PDF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avala.

cs EAS (Thermally limited) IAR EAR eSingle Pulse Avalanche Energy ÙAvalanche Current gRepetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Moun.

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB4410，IIRFB4410 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤10mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·.

*Static drain-source on-resistance: RDS(on) ≤10mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=2.