| Part Number | IRFB4710 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFB4710，IIRFB4710
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.014Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot va.
*Static drain-source on-resistance: RDS(on) ≤0.014Ω *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta. |
IRFB4710 Datasheet and Specifications PDF
The IRFB4710 is a N-Channel MOSFET.
Key Specifications
| Package | TO-220AB |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 8.77 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFB4710 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview |
PD- 94080
IRFB4710 IRFS4710 IRFSL4710
HEXFET® Power MOSFET
Applications l High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce S.
Units
A W W/°C V V/ns °C
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Notes through Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient are on page 11
Typ.
* * * 0.50 * * * * * * Max. 0.74 * * * 62 40 Units °C/W 1 3/16/01 IRFB/IRFS/IR. |