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IRFF220 Datasheet

The IRFF220 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFF220
ManufacturerIntersil
Overview IRFF220 Data Sheet March 1999 File Number 1889.3 3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET de.
* 3.5A, 200V
* rDS(ON) = 0.800Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRFF220
DescriptionN-Channel MOSFET
ManufacturerInternational Rectifier
Overview The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design ac.
* Repetitive Avalanche Ratings
* Dynamic dv/dt Rating
* Hermetically Sealed
* Simple Drive Requirements
* ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy p.
Part NumberIRFF220
DescriptionFIELD EFFECT POWER TRANSISTOR
ManufacturerGE
Overview ~D~[P~U FIELD EFFECT POVVER TRANSISTOR IRFF220,221 3.5 AMPERES 200, 150 VOLTS ROS(ON) =0.8 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS tec.
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
* Excellent thermal stability - Ease of paralle.