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IRFF220 - N-Channel MOSFET

General Description

The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance.

Key Features

  • Repetitive Avalanche Ratings.
  • Dynamic dv/dt Rating.
  • Hermetically Sealed.
  • Simple Drive Requirements.
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020 They are well suited for.

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📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFF210 TRANSISTORS
IRFF230 HEXFET TRANSISTORS
IRFF024 N-CHANNEL
IRFF110 HEXFET TRANSISTORS
IRFF120 N-channel Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS THRU-HOLE TO-205AF (TO-39) Product Summary Part Number BVDSS IRFF220 200V RDS(on) ID 0.80 3.5A PD-90427E IRFF220 JANTX2N6790 JANTXV2N6790 200V, N-CHANNEL REF: MIL-PRF-19500/555 Description The HEXFET® technology is the key to International Rectifier’s HiRel advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high trans conductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching and temperature stability of the electrical parameters.