| Part Number | IRFIZ34N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe. atings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche . |
IRFIZ34N Datasheet and Specifications PDF
The IRFIZ34N is a Power MOSFET.
Key Specifications
| Package | TO-220AB |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 19.8 mm |
| Length | 10.6172 mm |
| Width | 4.826 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFIZ34N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching and conduction losses ·100% avalanche tested ·Minim.
*With TO-220F package *Low input capacitance and gate charge *Low gate input resistance *Reduced switching and conduction losses *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications INCHANGE Semiconductor IR. |