| Part Number | IRFP140N Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switchi.
VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt * Operating Junction and Storage Temperature Range Solde. |
IRFP140N Datasheet and Specifications PDF
The IRFP140N is a Power MOSFET.
| Part Number | IRFP140N Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Intersil |
| Overview |
IRFP140N
TM
Data Sheet
March 2000
File Number
4841
33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging
JEDEC TO-247
SOURCE DRAIN GATE
Features
• Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VG.
* Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V * Simulation Models - Temperature Compensated PSPICE™ and SABER© Electrical Models - Spice and SABER© Thermal Impedance Models - * Peak Current vs Pulse Width Curve DRAIN (TAB) * UIS Rating Curve Ordering Information Symbol . |
| Part Number | IRFP140N Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFP140N，IIRFP140N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤52mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devi.
*Static drain-source on-resistance: RDS(on)≤52mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Fully Avalanche Rated *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |