| Part Number | IRFP4768PbF Datasheet |
|---|---|
| Manufacturer | Infineon |
| Overview | IRFP4768PbF VDSS RDS(on) typ. max ID 250V 14.5m 17.5m 93A Application ⚫ High Efficiency Synchronous Rectification in SMPS ⚫ Uninterruptible Power Supply ⚫ High Speed Power Switching ⚫ Hard Switch. stics EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient Max. 93 66 370 520 3.4 ± 20 24 -55 to + 175 300. |
IRFP4768PbF Datasheet and Specifications PDF
The IRFP4768PbF is a MOSFET.
| Part Number | IRFP4768PBF Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | PD - 97379 IRFP4768PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequ. 1.1Nxm) 770 See Fig. 14, 15, 22a, 22b Units A W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy d Avalanche Current c Repetitive Avalanche Energy c mJ A mJ Thermal Resistance Symbol RθJC RθCS RθJA Parameter Junction-to-Case ij Case-to-Sink, . |