The IRFR3710Z is a N-Channel MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.3876 mm |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFR3710Z Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR3710Z, IIRFR3710Z
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤18mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on)≤18mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VG. |
| Part Number | IRFR3710Z Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview |
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
* Advanced Process Technology * Ultra Low On-Resistance * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Lead-Free HEXFET® Power MOSFET VDSS RDS(on) ID 100V 18m 42A D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to a. |
| Part Number | IRFR3710Z Datasheet |
|---|---|
| Description | AUTOMOTIVE MOSFET |
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Rutronik | 6000 | 3000+ : 0.757 USD 6000+ : 0.7138 USD 9000+ : 0.6705 USD 15000+ : 0.6056 USD |
View Offer |
| Rochester Electronics | 118 | 100+ : 0.9061 USD 500+ : 0.8155 USD 1000+ : 0.7521 USD 10000+ : 0.6705 USD |
View Offer |
| DigiKey | 3681 | 1+ : 2.55 USD 10+ : 1.639 USD 100+ : 1.1178 USD 500+ : 0.89476 USD |
View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| IRFR3710ZPBF | International Rectifier | Automotive MOSFET |
| IRFR3710ZPbF | Infineon | Power MOSFET |