The IRFR3710ZPBF is a Automotive MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.2606 mm |
| Length | 6.1976 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFR3710ZPBF Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t. l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 100V G S RDS(on) = 18mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes . |
| Part Number | IRFR3710ZPBF Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview |
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu.
* Advanced Process Technology * Ultra Low On-Resistance * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Lead-Free HEXFET® Power MOSFET VDSS RDS(on) ID 100V 18m 42A D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to a. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| RS (Formerly Allied Electronics) | 0 | 5+ : 1.94 USD 25+ : 1.84 USD 50+ : 1.75 USD |
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| Farnell | 0 | 5+ : 0.491 GBP 25+ : 0.446 GBP 100+ : 0.359 GBP 250+ : 0.335 GBP |
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| Microchip USA | 358 | 600+ : 4.5850496 USD 1000+ : 4.5708544 USD 10000+ : 4.5566592 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFR3710Z | Inchange Semiconductor | N-Channel MOSFET |
| IRFR3710Z | Infineon | Power MOSFET |
| IRFR3710Z | International Rectifier | AUTOMOTIVE MOSFET |