The IRFR4104 is a Power MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.52 mm |
| Length | 6.7056 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFR4104 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview |
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t.
* * * * * Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S RDS(on) = 5.5mΩ ID = 42A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p. |
| Part Number | IRFR4104 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
IRFR4104, IIRFR4104
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤5.5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust de.
*Static drain-source on-resistance: RDS(on)≤5.5mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 V. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Newark | 5453 | 1+ : 1.9 USD 10+ : 1.21 USD 25+ : 1.07 USD 50+ : 0.941 USD |
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| Future Electronics | 2000 | 2000+ : 1.06 USD 4000+ : 1.05 USD 6000+ : 1.04 USD |
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| Future Electronics | 0 | 2000+ : 1.06 USD 4000+ : 1.05 USD 6000+ : 1.04 USD |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFR4104PbF | International Rectifier | Power MOSFET |