The IRFR430A is a Power MOSFET.
| Package | DPAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 2.507 mm |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
Vishay
IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (.
* Low gate charge Qg results in simple drive requirement
* Improved gate, avalanche, and dynamic dV/dt ruggedness
* Fully characterized capacitance and avalanche voltage and current
Available
* Effective Coss specified
* Material categorization: for definitions of compliance please see .
International Rectifier
PD - 94356A SMPS MOSFET IRFR430A IRFU430A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS .
he Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
*
*
*
*
*
*
*
*
*
Max.
130 5.0 11
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
*
*
* 0.
Inchange Semiconductor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Sourc.
*Drain Current
*ID= 5A@ TC=25℃
*Drain Source Voltage-
: VDSS=500V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 1.7Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Designed for use in switch mode power supplies and .
| Seller | Inventory | Price Breaks | Buy |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFR430B | Fairchild Semiconductor | 500V N-Channel MOSFET |
| IRFR430APBF | International Rectifier | HEXFET Power MOSFET |
| IRFR430 | Fairchild Semiconductor | Power MOSFET |