IRFR430A Datasheet and Specifications PDF

The IRFR430A is a Power MOSFET.

Key Specifications Powered by Octopart

PackageDPAK
Mount TypeSurface Mount
Pins3
Height2.507 mm
Length6.73 mm
Width6.22 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C

IRFR430A Datasheet

IRFR430A Datasheet (Vishay)

Vishay

IRFR430A Datasheet Preview

IRFR430A, IRFU430A, SiHFR430A, SiHFU430A Vishay Siliconix Power MOSFET DPAK (TO-252) D IPAK (TO-251) D D G GS GD S S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (.


* Low gate charge Qg results in simple drive requirement
* Improved gate, avalanche, and dynamic dV/dt ruggedness
* Fully characterized capacitance and avalanche voltage and current Available
* Effective Coss specified
* Material categorization: for definitions of compliance please see .

IRFR430A Datasheet (International Rectifier)

International Rectifier

IRFR430A Datasheet Preview

PD - 94356A SMPS MOSFET IRFR430A IRFU430A HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High speed power switching l VDSS .

he Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy ‚ Avalanche Current Repetitive Avalanche Energy Typ.
*
*
*
*
*
*
*
*
* Max. 130 5.0 11 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
*
*
* 0.

IRFR430A Datasheet (Inchange Semiconductor)

Inchange Semiconductor

IRFR430A Datasheet Preview

·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Sourc.


*Drain Current
*ID= 5A@ TC=25℃
*Drain Source Voltage- : VDSS=500V(Min)
*Static Drain-Source On-Resistance : RDS(on) = 1.7Ω(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
*Designed for use in switch mode power supplies and .

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