| Part Number | IRFR9214 |
|---|---|
| Manufacturer | IRF |
| Overview | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and rug. D @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive . |
IRFR9214 Datasheet
The IRFR9214 is a Power MOSFET.
| Part Number | IRFR9214 |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized dev.
* Advanced process technology * Fully avalanche rated * Surface-mount (IRFR9214, SiHFR9214) * Straight lead (IRFU9214, SiHFU9214) * P-channel * Fast switching Available * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation p. |