IRFR9214PBF Description
l l HEXFET® Power MOSFET VDSS = -250V RDS(on) = 3.0Ω D G S ID = -2.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a...
IRFR9214PBF Key Features
- Straight Lead (IRFU9214)
- Advanced Process Technology
- Fast Switching
- Fully Avalanche Rated