| Part Number | IRFW630B |
|---|---|
| Manufacturer | onsemi |
| Overview | These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minim. Description These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high ene. |
IRFW630B Datasheet
The IRFW630B is a N-Channel MOSFET.
| Part Number | IRFW630B |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * 9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! * ◀ ▲ * * G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM. |