IRFW630B
Overview
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. 9.0 A, 200 V, RDS(on) = 400 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 22 nC) Low Crss (Typ. 22 pF) 100% Avalanche Tested * G S D2-PAK G.
