The IRFZ48V is a Power MOSFET.
| Package | TO-220AB |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 20.56 mm |
| Length | 10.6426 mm |
| Width | 4.82 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRFZ48V Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche . |
| Part Number | IRFZ48V Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFZ48V, IIRFZ48V
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M.
*Static drain-source on-resistance: RDS(on) ≤12mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=2. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRFZ48N | International Rectifier | Power MOSFET |
| IRFZ48 | International Rectifier | Power MOSFET |
| IRFZ48N | NXP Semiconductors | N-Channel MOSFET |
| IRFZ48NLPBF | International Rectifier | HEXFET Power MOSFET |
| IRFZ48Z | International Rectifier | AUTOMOTIVE MOSFET |
| IRFZ48VS | International Rectifier | Power MOSFET |
| IRFZ48NL | International Rectifier | Power MOSFET |