IRFZ48V Datasheet and Specifications PDF

The IRFZ48V is a Power MOSFET.

Key Specifications

PackageTO-220AB
Mount TypeThrough Hole
Pins3
Height20.56 mm
Length10.6426 mm
Width4.82 mm
Max Operating Temp150 °C
Min Operating Temp-55 °C
Part NumberIRFZ48V Datasheet
ManufacturerInternational Rectifier
Overview Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche .
Part NumberIRFZ48V Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFZ48V, IIRFZ48V ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·M.
*Static drain-source on-resistance: RDS(on) ≤12mΩ
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRITION
*reliable device for use in a wide variety of applications
*ABSOLUTE MAXIMUM RATINGS(Ta=2.

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