| Part Number | IRLI640G Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 F. ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 5.0V Continuous Drain Current, VGS @ 5.0V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy . |
IRLI640G Datasheet and Specifications PDF
The IRLI640G is a Power MOSFET.
Key Specifications
| Package | TO-220-3 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Height | 9.8 mm |
| Length | 10.63 mm |
| Width | 4.83 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRLI640G Datasheet |
|---|---|
| Description | ower MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 FULLPAK eli.
* Isolated package * High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) * Sink to lead creepage distance = 4.8 mm * Logic-level gate drive * RDS(on) specified at VGS = 4 V and 5 V * Fast switching * Ease of paralleling * Material categorization: for definitions of compliance please see . |