The IRLZ14 is a Power MOSFET.
| Package | D2PAK |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.83 mm |
| Length | 10.41 mm |
| Width | 9.65 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | IRLZ14 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe. nt application. The through-hole version (IRLZ14L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VG. |
| Part Number | IRLZ14 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is.
* Dynamic dV/dt rating * Logic-level gate drive Available * RDS(on) specified at VGS = 4 V and 5 V * 175 °C operating temperature Available * Fast switching * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see . |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 953 | 1+ : 2.17 USD 50+ : 1.0496 USD 100+ : 0.9407 USD 500+ : 0.74978 USD |
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| TTI | 150 | 50+ : 0.627 USD 100+ : 0.62 USD 200+ : 0.613 USD 500+ : 0.606 USD |
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| TME | 0 | 1+ : 2.118 EUR 5+ : 1.583 EUR 10+ : 1.358 EUR 50+ : 0.944 EUR |
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| Part Number | Manufacturer | Description |
|---|---|---|
| IRLZ14L | Vishay | Power MOSFET |
| IRLZ14S | Vishay | Power MOSFET |