| Part Number | IRLZ34L Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with th. ssipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ34L) is available for lowprofile applications. D 2 Pak T O -2 6 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Curre. |
IRLZ34L Datasheet and Specifications PDF
The IRLZ34L is a HEXFET Power MOSFET.
| Part Number | IRLZ34L Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and rugg.
* Halogen-free According to IEC 61249-2-21 Definition * Advanced Process Technology * Surface Mount (IRLZ34S, SiHLZ34S) * Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) * 175 °C Operating Temperature * Fast Switching * Fully Avalanche Rated * Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third ge. |