The IXFH86N30T is a Power MOSFET.
| Package | TO-247-3 |
|---|---|
| Mount Type | Through Hole |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | IXFH86N30T Datasheet |
|---|---|
| Manufacturer | IXYS |
| Overview |
TrenchTM HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFH86N30T IXFT86N30T
VDSS = 300V ID25 = 86A RDS(on) 46m
TO-247 (IXFH)
Symbol VDSS VDGR VGSS .
* International Standard Packages * Avalanche Rated * High Current Handling Capability * Fast Intrinsic Rectifier * Low RDS(on) Advantages * Easy to Mount * Space Savings * High Power Density Applications * DC-DC Converters * Battery Chargers * Switch-Mode and Resonant-Mode Power Supplies * DC Chopp. |
| Part Number | IXFH86N30T Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*With TO-247 packaging *High speed switching *Very high commutation ruggedness *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *PFC stages *Power supply *Switching applications INCHANGE Semiconductor IXFH86N30T *. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| DigiKey | 205 | 1+ : 12.33 USD 30+ : 7.42333 USD 120+ : 6.34875 USD 510+ : 6.04875 USD |
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| TME | 0 | 1+ : 12.09 EUR 30+ : 7.44 EUR 120+ : 7.31 EUR |
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| TME | 0 | 1+ : 12.09 USD 30+ : 7.44 USD 120+ : 7.31 USD |
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