IXFH86N30T - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-247 packaging.
High speed switching.
Very high commutation ruggedness.
Easy to use.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXFH86N30T n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXFH86N30T
Manufacturer	Inchange Semiconductor
File Size	208.24 KB
Description	N-Channel MOSFET
Datasheet	IXFH86N30T Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications INCHANGE Semiconductor IXFH86N30T ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 86 IDM Drain Current-Single Pulsed 190 PD Total Dissipation 830 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.15 UNIT ℃/W isc website：www.