| Part Number | J211 Datasheet |
|---|---|
| Manufacturer | NXP Semiconductors |
| Overview |
N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during tr.
* High speed switching * Interchangeability of drain and source connections * High impedance. APPLICATIONS * Analog switches * Choppers, multiplexers and commutators * Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This produc. |
J211 Datasheet and Specifications PDF
The J211 is a N-channel field-effect transistors.
| Part Number | J211 Datasheet |
|---|---|
| Description | N-Channel RF Amplifier |
| Manufacturer | onsemi |
| Overview |
This device is designed for HF/VHF mixer/amplifier and
applications where process 50 is not adequate. Sufficient gain and low−noise for sensitive receivers. Sourced from process 90.
MAXIMUM RATINGS (.
MMBFJ211 (Note 3) (Note 3) Unit
PD
Total Device Dissipation
Derate Above 25°C
350
225
mW
2.8
1.8
mW/°C
RqJC
Thermal Resistance, Junction *to *Case 125 * °C/W RqJA Thermal Resistance, Junction *to *Ambient 357 556 °C/W 3. Device mounted on FR *4 PCB 36 mm x 18 mm x 1.5 mm; mounting pa. |
| Part Number | J211 Datasheet |
|---|---|
| Description | N-Channel RF Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel . istics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 357 Max *MMBFJ210-212 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on F. |
| Part Number | J211 Datasheet |
|---|---|
| Description | N-Channel JFETs |
| Manufacturer | Vishay |
| Overview | The J/SSTJ210 Series n-channel JFETs are general-purpose and high-frequency amplifiers for a wide range of applications. These devices feature low leakage (IGSS < 100 pA). capability. The J/SSTJ210 Se. D Excellent High Frequency Gain: J211/212, Gps 12 dB (typ) @ 400 MHz D Very Low Noise: 3 dB (typ) @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation D High Gain: AV = 35 @ 100 mA BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Spe. |