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J212 Datasheet

The J212 is a N-Channel RF Amplifier. Download the datasheet PDF and view key features and specifications below.

Part NumberJ212
ManufacturerFairchild Semiconductor
Overview J210 / J211 / J212 / MMBFJ210 / MMBFJ211 / MMBFJ212 J210 J211 J212 MMBFJ210 MMBFJ211 MMBFJ212 G S G S TO-92 D SOT-23 Mark: 62V / 62W / 62X D NOTE: Source & Drain are interchangeable N-Channel . istics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient J210-212 350 2.8 125 357 Max *MMBFJ210-212 225 1.8 556 Units mW mW/°C °C/W °C/W *Device mounted on F.
Part NumberJ212
DescriptionN-Channel JFET
ManufacturerInterFET
Overview The -25V InterFET J210, J211, and J212 JFET’s are targeted for sensitive amplifier stages with gate leakages typically less than 10pA at room temperatures. Drain 1 Source 2 SOT23 Top View 3 Gate Ga.
* InterFET N0026L Geometry
* Low Noise: 2.5 nV/√Hz Typical
* Low Ciss: 5pF Typical
* Low Leakage: 10pA Typical
* RoHS Compliant
* SMT, TH, and Bare Die Package options. Applications
* Audio Amplifiers
* General Purpose Amplifiers Description The -25V InterFET J210, J211, and J212 JFET’s are targeted.
Part NumberJ212
DescriptionN-channel field-effect transistors
ManufacturerNXP Semiconductors
Overview N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during tr.
* High speed switching
* Interchangeability of drain and source connections
* High impedance. APPLICATIONS
* Analog switches
* Choppers, multiplexers and commutators
* Audio amplifiers. DESCRIPTION N-channel symmetrical junction field-effect transistor in a TO-92 (SOT54) package. CAUTION This produc.
Part NumberJ212
DescriptionAmplifier
ManufacturerMicross
Overview J212 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J212 The J212 is a n-channel JFET General Purpose amplifier with low noise and low leakage. The TO-92 package is well suited for cos. DIRECT REPLACEMENT FOR SILICONIX J212  HIGH GAIN   gfs = 7000µmho MIN  HIGH INPUT IMPEDANCE  IGSS = 100pA max  LOW INPUT CAPACITANCE  Ciss = 5pF  ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)  Maximum Temperatures  Storage Temperature  ‐55°C to +150°C  ƒ High gain Operating Junction Tem.