| Part Number | KSA940 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
TO−220−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF .
eability Code = Specific Device Code
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
ICBO IEBO hFE VCE(sat) VBE(on)
fT
Collector Cut *off Current Emitter Cut *off Current DC Current Gain Collector *Emitter Saturation Voltage Base *. |
KSA940 Datasheet and Specifications PDF
The KSA940 is a Vertical Deflection Output Power Amplifier.
Key Specifications
| Package | TO-220 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Frequency | 4 MHz |
| Height | 9.2 mm |
| Length | 9.9 mm |
| Width | 4.5 mm |
| Max Operating Temp | 150 °C |
| Part Number | KSA940 Datasheet |
|---|---|
| Description | PNP Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview | KSA940 KSA940 Vertical Deflection Output Power Amplifier • Complement to KSC2073 1 TO-220 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless ot. MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKIN. |
| Part Number | KSA940 Datasheet |
|---|---|
| Description | PNP Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type KSC2073 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust devic. herwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -150 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA ; IC= 0 -5 V VCE(sat) Collector-Emi. |