KSB Datasheet and Specifications PDF

KSB & KSF Series Low-profile Tact Switch Features/Benefits • Low profile • Protected against flux • KSB without top sealing • KSF with top sealing • RoHS compliant and compatible Typical Applications .

Benefits
* Low profile
* Protected against flux
* KSB without top sealing
* KSF with top sealing
* RoHS compliant and compatible Typical Applications
* Low profile keyboards
* Instrumentation
* Industrial control
* Medical
* Military Silver Gold 0.2 VA 32 VDC 20 mV 10 mA 1 mA Ω B Tactile Switches .

KSB907 KSB907 Power Amplifier Applications • • • • • High DC Current Gain Low Collector-Emitter Saturation Voltage Built-in Damper Diode at E-C Darlington TR Complement to KSD1222 1 I-PACK 1. Base .

ition IC = - 25mA, IB = 0 VCB = - 60V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 1A VCE = - 2V, IC = - 3A IC = - 2A, IB = - 4mA IC = - 2A, IB = - 4mA VCC = - 30V, IC = - 3A IB1 = - IB2 = - 6mA RL = 10Ω 0.3 0.6 0.25 2000 1000 - 1.5 -2 V V µs µs µs Min. - 40 Typ. Max. - 20 - 2.5 Units V µA µA ©200.

KSB906 KSB906 Low Frequency Power Amplifier • Low Collector- Emitter Saturation Voltage • Complement to KSD1221 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute M.

VCB = - 60V, IE = 0 VEB = - 7V, IC = 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.1A VCE = - 5V, IC = - 0.5A VCB = - 10V, f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω 60 20 -1 -1 9 150 0.4 1.7 0.5 Min. - 60 Typ. Max. - 100 - 100 200 - 1..

·Complement to KSD880W ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low frequency power amplifier ABSOLUTE MAXIMUM RATINGS(.

TYP MAX UNIT -1 V -1 V -100 μA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -100 μA hFE1 DC Current Gain hFE2 DC Current Gain IC=- 0.5A; VCE=- 5V 60 200 IC= -3A; VCE= -5V 20 fT Current-Gain
*Bandwidth Product IC= -0.5A; VCE= -5V 9 MHz Cob Collector output capacitance VCB=-10.