KSB1151 Datasheet

The KSB1151 is a PNP Transistor.

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Part NumberKSB1151
ManufacturerInchange Semiconductor
Overview ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICAT. llector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -50V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE-1 DC Current Gain IC= -0.1A; VCE= -1V hFE-2 DC Current Gain IC= -2A; VCE= -1V.
Part NumberKSB1151
DescriptionPNP Epitaxial Silicon Transistor
ManufacturerFairchild Semiconductor
Overview KSB1151 KSB1151 Feature • Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.3W (Ta=25°C) • Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector .
* Low Collector-Emitter Saturation Voltage
* Large Collector Current
* High Power Dissipation : PC=1.3W (Ta=25°C)
* Complement to KSD 1691 1 TO-126 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Co.
Part NumberKSB1151
DescriptionPNP Transistor
ManufacturerJCET
Overview JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors KSB1151 TRANSISTOR (PNP) FEATURES z Low Collector-Emitter Saturation Voltage z Large Collector Current z High. z Low Collector-Emitter Saturation Voltage z Large Collector Current z High Power Dissipation z Complement to KSD1691 TO
* 126 1. EMITTER 2. COLLECTOR 3. BASE 0$5.,1* B1151 zXXX B1151 'HYLFH FoGH Solid dot = Green molding compound device, if none, the normal device ;;; &ode Equivalent Circuit .