| Part Number | KSB834 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview | KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 1 TO-220 2.Collector 3.Emitter 1.Base PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted S. - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF µs µs µs Min. Typ. Max. - 100 - 100 Units µA µ. |
KSB834 Datasheet and Specifications PDF
The KSB834 is a Low Frequency Power Amplifier.
Key Specifications
| Package | TO-263-3 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 5.08 mm |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | KSB834 Datasheet |
|---|---|
| Description | PNP Silicon Transistor |
| Manufacturer | Samsung Semiconductor |
| Overview | . . |
| Part Number | KSB834 Datasheet |
|---|---|
| Description | Low Frequency Power Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | KSB834 KSB834 Low Frequency Power Amplifier • Complement to KSD880 1 TO-220 2.Collector 3.Emitter 1.Base PNP Silicon Epitaxial Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted S. - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A IC = - 3A, IB = - 0.3A VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 0.5A VCB = - 10V, IE = 0 f = 1MHz VCC = -30V, IC = - 1A IB1 = - IB2 = - 0.2A RL = 30Ω - 60 60 20 - 0.5 - 0.7 9 150 0.4 1.7 0.5 200 -1 -1 V V MHz pF µs µs µs Min. Typ. Max. - 100 - 100 Units µA µ. |