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KSD5090 Datasheet

The KSD5090 is a Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberKSD5090
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATIN. Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain VECF C-E Diode Forward Voltage tf Fall Time IC= 6A ; VCE= 5V IF= 8A IC= 6A , IB1= 1.2A ; IB2= -2.4A RL= 33.3Ω; VCC= 200V MIN TYP. MAX UNIT.
Part NumberKSD5090
DescriptionSilicon NPN Power Transistor
ManufacturerNJS
Overview • High Breakdown Voltage- : VCBO= 1500V (Min) • High Switching Speed • High Reliability • Built-in Damper Diode APPLICATIONS • Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM . H 3.20 3.40 J 0.595 0.605 K 20.50 20.70 L 1.90 2.10 N 10.89 10.91 q 4.90 5.10 R 3.35 3.45 s 1.995 2.005 u 5.90 6.'0 Y 9.90 10.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is b.