KTB778 Datasheet and Specifications PDF

The KTB778 is a TRIPLE DIFFUSED PNP TRANSISTOR.

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Part NumberKTB778 Datasheet
ManufacturerKEC
Overview SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC. Complementary to KTD998. Recommended for 45 50W Audio Frequency Amplifier Output Stage. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperat.
Part NumberKTB778 Datasheet
DescriptionSilicon PNP Power Transistors
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type KTD998 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL. ge IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -120V ; IE=0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -5V
* hFE Classificat.