| Part Number | M58BW016DB Datasheet |
|---|---|
| Manufacturer | Numonyx |
| Overview |
M58BW016DB M58BW016DT M58BW016FT M58BW016FB
16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories
Features
Supply voltage – VDD = 2.7 V to 3.6 V for program, erase
and read – VDDQ = VD.
Supply voltage * VDD = 2.7 V to 3.6 V for program, erase and read * VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers * VPP = 12 V for fast program (optional) High performance * Access times: 70, 80 ns * 56 MHz effective zero wait-state burst read * Synchronous burst read * Asynchronous page read Hardw. |
M58BW016DB Datasheet and Specifications PDF
The M58BW016DB is a 16 Mbit 3V supply Flash memories.
| Part Number | M58BW016DB Datasheet |
|---|---|
| Description | 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories |
| Manufacturer | STMicroelectronics |
| Overview |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SUMMARY s SUPPLY VOLTAGE * VDD = 2.7V to 3.6V for Program, Erase and Read * VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers * VPP = 12V for fast Program (optional) s Figure 1. Packages HIGH PERFORMANCE * Access Time: 80, 90 and 100ns * 56MHz Effective Zero Wait-State Burst Read * Synchronous Burst Re. |