MBR20150 Datasheet and Specifications PDF

The MBR20150 is a 20 Amp Schottky Barrier Rectifier.

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Part NumberMBR20150 Datasheet
ManufacturerMicro Commercial Components
Overview MCC TM Micro Commercial Components  omp   onents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Metal of silicon rectifier, major.
* Metal of silicon rectifier, majority carrier conduction
* Guard ring for transient protection
* Low power loss high efficiency
* High surge capacity, High current capability
* Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information)
* Case Material.
Part NumberMBR20150 Datasheet
DescriptionHigh Power Schottky Barrier Rectifier
ManufacturerSooner
Overview Sooner Power Semiconductor MBR20100 THRU MBR20200 High Power Schottky Barrier Rectifier Package Outline Dimensions ( millimeters ) BA C K L D 1 F E 2 J I H M N G PIN 1 PIN 2 TO-220AC Dim. M.
* High Current Capability
* Low Switching Noise
* High Surge Capability
* Low Power Loss & High Efficiency
* Guard Ring Protection
* Pd-free lead plating & Halogen-free part Mechanical
* Molded Plastic : TO-220AC
* Plastic materials used carries underwriters laboratory flammability classification 9.
Part NumberMBR20150 Datasheet
Description20A High Power Schottky Barrier Rectifiers
ManufacturerChip Integration Technology
Overview MBR2040 THRU MBR20200 20A High Power Schottky Barrier Rectifiers ■ Features ■ Outline • Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR2040~ΜΒR2065). standard >10ΚV(ΜΒR20100.
* Outline
* Electrostatic discharge (ESD) test under IEC6100-4-2 standard >16ΚV(ΜΒR2040~ΜΒR2065). standard >10ΚV(ΜΒR20100~ΜΒR20200).
* Low power loss, high efficiency.
* High current capability, low forward voltage drop.
* High surge capability.
* Guardring for overvoltage protection.
* Ultra high.
Part NumberMBR20150 Datasheet
DescriptionSchottky Barrier Rectifier
ManufacturerGalaxy Microelectronics
Overview Production specification Schottky Barrier Rectifier MBR20150--MBR20200 FEATURES z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Dro. z Metal-Semicondutcor Junction With Guard Ring. Pb z Epitaxial Construction. Lead-free z Low Forward Voltage Drop,Low Switching Losses. z High Surge Capacity. z For Use in Low Voltage,High Frequency Inverters Free Wheeling,and Polarity Protection Applications. TO-220AC MAXIMUM RATING opera.