MBR3100 Datasheet and Specifications PDF

Axial Lead Rectifier MBR3100 This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide pass.

epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low
*voltage, high
*frequency inverters, free wheeling diodes, and polarity protection diodes. Features
* Low Reverse Current
* Low Stored Charge, Majority Carrier Conduction
* Low Power Lo.

MBR340 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 3.0 Amperes FEATURES • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge .

* Guard Ring Die Construction for Transient Protection
* Low Power Loss, High Efficiency
* High Surge Capability
* High Current Capability and Low Forward Voltage Drop
* Surge Overload Rating to 80A Peak
* For Use in Low Voltage,High Frequency Inverters ,Free Wheeling , and Polarity Protection Appli.

DIP Type Schottky Barrier Rectifier MBR320 ~ MBR3100 TransDisiotodress Ƶ Features ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge curren.

ƽ Metal silicon junction, majority carrier conduction ƽ Low power loss, high efficiency ƽ High forward surge current capability DO-201AD 0.210 (5.3) 0.190 (4.8) DIA. 1.0 (25.4) MIN. 0.375 (9.5) 0.285 (7.2) 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) Ƶ.

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