| Part Number | MBR60080CT Datasheet |
|---|---|
| Manufacturer | GeneSiC |
| Overview |
Silicon Power Schottky Diode
Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive
MBR60045CT thru MBR600100CTR
VRRM = 45 V - 100 V IF(AV) = 600 A
Twin Tower Package
M.
* High Surge Capability * Types from 45 V to 100 V VRRM * Not ESD Sensitive MBR60045CT thru MBR600100CTR VRRM = 45 V - 100 V IF(AV) = 600 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR60045CT(R) . |
MBR60080CT Datasheet and Specifications PDF
The MBR60080CT is a Silicon Power Schottky Diode.
Key Specifications
| Package | Module |
|---|---|
| Mount Type | Chassis Mount |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | MBR60080CT Datasheet |
|---|---|
| Description | Schottky Power Diode |
| Manufacturer | Naina Semiconductor |
| Overview |
Naina Semiconductor Ltd.
Features
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR60045CT thru MBR600100CTR
Silicon Schottky Diode, 600A
TWIN.
* * * * Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR60045CT thru MBR600100CTR Silicon Schottky Diode, 600A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage D. |
| Part Number | MBR60080CT Datasheet |
|---|---|
| Description | Silicon Power Schottky Diode |
| Manufacturer | America Semiconductor |
| Overview | Free Datasheet Free Datasheet . . |