MD2001FX Datasheet
MD2001FX Datasheet (STMicroelectronics)
STMicroelectronics
The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon effic.
* State-of-the-art technology:
* Diffused collector “Enhanced generation”
* More stable performances versus operating temperature variation
* Low base-drive requirements
* Tighter hFE range at operating collector current
* Fully insulated power package U.L. compliant
Applications
* Horizontal defle.
MD2001FX Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal defle.
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MD2001FX MIN TYP. MAX UNIT VCEO(sus)(1) Collector-emitter sustaining Voltage IC= 50mA; IC= 0 700 VCE(sat)(1) Collector-Emitter Saturation Voltage IC= 6.0A; IB=1.5A VBE(sat)(1) Base-Emitter Saturation Voltage IC= 6.0A; IB=1.5A I.