| Part Number | MJ11028 Datasheet |
|---|---|
| Manufacturer | DIGITRON |
| Overview |
MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP
High-reliability discrete products and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
FEATURES .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. * Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage . |
MJ11028 Datasheet and Specifications PDF
The MJ11028 is a Power Transistor.
| Part Number | MJ11028 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A ·Complement to the PNP MJ11029 ·Minimum Lot-to-Lot variations for r. registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 25A; IB= 250mA V CE(sat)-. |
| Part Number | MJ11028 Datasheet |
|---|---|
| Description | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| Manufacturer | onsemi |
| Overview |
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP)
High-Current Complementary Silicon Power Transistors
High−Current Complementary Silicon Power Transistors are for use as output devices in compl.
* High DC Current Gain * hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc * Curves to 100 A (Pulsed) * Diode Protection to Rated IC * Monolithic Construction with Built *In Base *Emitter Shunt Resistor * Junction Temperature to + 200_C * Pb *Free Packages are Available* MAXIMUM RATINGS (TJ. |
| Part Number | MJ11028 Datasheet |
|---|---|
| Description | Silicon Darlington NPN Transistor |
| Manufacturer | NTE Electronics |
| Overview |
The MJ11028 i a silicon Darlington NPN transistor in a TO−3 type package designed for use as an output device in general purpose amplifier applications.
Features: D High Gain Darlington Performance .
D High Gain Darlington Performance D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A
hFE = 400 (Min) @ IC = 50A D Monolithic Construction w/Built *In Base *Emitter Shunt Resistor Absolute Maximum Ratings: Collector *Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. |