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MJ11033 Datasheet

The MJ11033 is a COMPLEMENTARY DARLINGTON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part NumberMJ11033
ManufacturerSeme LAB
Overview NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ11032 COMPLEMENTARY DARLINGTON POWER TRANSISTOR FEATURES. 30 .15 (1.187 ) 1 1 6 .89 (0.665) 2
* HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A
* CURVES TO 100A (Pulsed)
* DIODE PROTECTION TO RATED IC
* MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE
  – EMITTER SHUNT RESISTOR 4.1 (0.161 +0.4
  –0 +0.016
  –0 ) 4.0 ± 0.1 (0.157 ± 0.00.
Part NumberMJ11033
DescriptionCOMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Manufactureronsemi
Overview MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power Transistors are for use as output devices in compl.
* High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
* Curves to 100 A (Pulsed)
* Diode Protection to Rated IC
* Monolithic Construction with Built−In Base−Emitter Shunt Resistor
* Junction Temperature to + 200_C
* Pb−Free Packages are Available* MAXIMUM RATINGS (TJ.
Part NumberMJ11033
DescriptionPower Transistor
ManufacturerDIGITRON
Overview MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS FEATURES  .
* Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
* Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Collector-emitter voltage Collector-base voltage Emitter-base voltage .
Part NumberMJ11033
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -25A : hFE= 400(Min.)@IC= -50A ·Complement to the NPN MJ11032 APPLICATIONS ·Designed for use . INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification MJ11033 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation V.

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