MJ15015 Datasheet and Specifications PDF

The MJ15015 is a NPN Transistor.

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Part NumberMJ15015 Datasheet
ManufacturerInchange Semiconductor
Overview ·Excellent Safe Operating Area ·DC Current Gain- : hFE= 20-70@IC = 4A,VCE= 4V ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Complement to the PNP MJ15016 ·Minimum Lot-to-Lot . IT Rth j-c Thermal Resistance,Junction to Case 0.98 ℃/W isc website: 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJ15015 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaini.
Part NumberMJ15015 Datasheet
DescriptionCOMPLEMENTARY SILICON POWER TRANSISTORS
Manufactureronsemi
Overview 2N3055AG (NPN), MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linea.
* High Current
*Gain
* Bandwidth
* Safe Operating Area
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector
*Emitter Voltage 2N3055AG MJ15015G, MJ15016G VCEO Vdc 60 120 Collector
*Base Voltage 2N3055AG MJ15015G, MJ15016G VCBO Vdc .
Part NumberMJ15015 Datasheet
DescriptionSilicon Complementary Transistors
ManufacturerNTE Electronics
Overview The MJ15015 (NPN) and MJ15016 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D. D High Safe Operating Area D High Current
*Gain
* Bandwidth Absolute Maximum Ratings: Collector
*Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector
*Emitter Voltage Base, VCEV . . . . . . . . . . . . . . . ..
Part NumberMJ15015 Datasheet
Description15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N3055A/D Complementary Silicon High-Power Transistors . . . PowerBase complementary transistors designed for high power audio, stepping. ÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ .