| Part Number | MJ3771 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
2N3771 (SILICON) 2N3772 MJ3771 M.J3772
HIGH-POWER NPN SILICON TRANSISTORS
· . . designed for use in power amplifier and switching circuits applications.
• High DC Current Gain -
hFE = 15 (Min) @ IC =.
Vdc Adc
Adc Watts w/oe
°e
-Indicates JEDEC Registered Data (2N3771, 2N3772).
2-606
r1111a'550~MA~
0.135
t 0.83 ~~tl
~t~
MAX
1_
L-r=:::=~~=::::::=J
II:::!"" - J:;\II0.44 -!Jl1 " * *-j if.4fI 1 I 1.197 nr:1;1; 0.151 DIA 0.655 0.161 I 0.675 EMITTER 09..2:2.5~ I' BASE CASE 11 TO~3 Col. |
MJ3771 Datasheet and Specifications PDF
The MJ3771 is a HIGH-POWER NPN SILICON TRANSISTORS.
| Part Number | MJ3771 Datasheet |
|---|---|
| Description | Silicon NPN Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier. Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A; IB= 1.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A VBE(on) Base-Emitter On Voltage IC= 15A ; VCE= 4V ICBO Collector Cutoff Current VCB= 50V; IE=0 IEBO Emitter Cutoff Current VEB= 5V; IC= . |