Datasheet Details
| Part number | MJ3771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.63 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3771_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ3771 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.63 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3771_InchangeSemiconductor.pdf |
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·High DC Current Gain ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 30 A IB Base Current-Continuous 7.5 A PD Total Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W MJ3771 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 15A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ3771 | HIGH-POWER NPN SILICON TRANSISTORS | Motorola |
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