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MJ3773 - Silicon NPN Power Transistor

General Description

Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A Low Leakage Icbo=1mA(max)@140V High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS

Designed for power amplifier and switching applications.

For ultimate circuit performance based on the design r

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www.DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@140V ·High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications. ·For ultimate circuit performance based on the design requirements.