Datasheet Details
| Part number | MJ3773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 110.94 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3773_InchangeSemiconductor.pdf |
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Overview: .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power.
| Part number | MJ3773 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 110.94 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | MJ3773_InchangeSemiconductor.pdf |
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·Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@140V ·High Current-Gain-Bandwidth ProductfT=1MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications.
·For ultimate circuit performance based on the design requirements.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCBO VEBO IC IB B MJ3773 PARAMETER Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature Range VALUE 160 60 7 16 4 200 200 -65~200 UNIT V V V A A W ℃ ℃ PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 0.875 UNIT ℃/W Rth j-c isc Website：.iscsemi.cn Datasheet pdf - http://..net/ .DataSheet.co.kr INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ3773 TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A;
| Part Number | Description |
|---|---|
| MJ3771 | Silicon NPN Power Transistor |
| MJ3772 | Silicon NPN Power Transistor |
| MJ3738 | Silicon PNP Power Transistor |
| MJ3055 | Silicon NPN Power Transistor |