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MJ3772 - HIGH-POWER NPN SILICON TRANSISTORS

Download the MJ3772 datasheet PDF. This datasheet also covers the MJ3771 variant, as both devices belong to the same high-power npn silicon transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MJ3771-Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MJ3772 Silicon NPN Power Transistor Inchange Semiconductor
MJ3771 Silicon NPN Power Transistor Inchange Semiconductor
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MJ3738 Silicon PNP Power Transistor Inchange Semiconductor
MJ3000 Bipolar NPN Device Semelab PLC

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MJ3771 HIGH-POWER NPN SILICON TRANSISTORS
MJ3000 10 AMPERE DARLINGTON POWER TRANSISTORS
MJ3001 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJ3281A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771 15 (Min) @ IC = 10 Adc - 2N3772. MJ3772 • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 15 Adc - MJ3771 1.0 Vdc (Max) @ IC = 10 Adc - MJ3772 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40-60 VOLTS 150 WATTS *MAXIMUM RATINGS Rating Coliector~Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current ~ Continuous Peak Base Current - Continuous Total Device Dissipation@TC=250C Derate above 2SoC Operating and Storage Junction Temperature Range Symbol VeEO VeEX Ves VES Ie IS PD TJ.