MJ3772 Datasheet and Specifications PDF

The MJ3772 is a Silicon NPN Power Transistor.

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Part NumberMJ3772 Datasheet
ManufacturerInchange Semiconductor
Overview ·Low Collector-Emitter Saturation VoltageVce(sat)=0.8V(Max)@Ic=10A ·Low Leakage Icbo=1mA(max)@100V ·High Current-Gain-Bandwidth ProductfT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and. t Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ3772 TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC=0.2A; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=10A; IB.
Part NumberMJ3772 Datasheet
DescriptionHIGH-POWER NPN SILICON TRANSISTORS
ManufacturerMotorola Semiconductor
Overview 2N3771 (SILICON) 2N3772 MJ3771 M.J3772 HIGH-POWER NPN SILICON TRANSISTORS · . . designed for use in power amplifier and switching circuits applications. • High DC Current Gain - hFE = 15 (Min) @ IC =. Vdc Adc Adc Watts w/oe °e -Indicates JEDEC Registered Data (2N3771, 2N3772). 2-606 r1111a'550~MA~ 0.135 t 0.83 ~~tl ~t~ MAX 1_ L-r=:::=~~=::::::=J II:::!"" - J:;II0.44 -!Jl1 "
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*-j if.4fI 1 I 1.197 nr:1;1; 0.151 DIA 0.655 0.161 I 0.675 EMITTER 09..2:2.5~ I' BASE CASE 11 TO~3 Coll.