MJE15033 Datasheet

The MJE15033 is a PNP Transistor.

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Part NumberMJE15033
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -250V(Min) ·DC current gain - : hFE = 50 (Min) @IC= -0.5 A : hFE = 10 (Min) @IC= -2.0 A ·Complement to Type MJE15032 ·Minimum Lot-to-Lot variations . c Website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE15033 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0 VCE(sat) Collector-Emitter Sat.
Part NumberMJE15033
DescriptionPNP Power Transistor
Manufactureronsemi
Overview Complementary Silicon Plastic Power Transistors MJE15032 (NPN), MJE15033 (PNP) Designed for use as high−frequency drivers in audio amplifiers. Features  High DC Current Gain  High Current Gain − Ban.
* High DC Current Gain
* High Current Gain
* Bandwidth Product
* TO
*220 Compact Package
* Epoxy Meets UL 94 V
*0 @ 0.125 in
* These Devices are Pb
*Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector
*Emitter Voltage Collector
*Base Voltage Emitter
*Base Voltage Collecto.
Part NumberMJE15033
DescriptionSilicon PNP Power Transistors
ManufacturerSavantic
Overview ·With TO-220C package ·Complement to type MJE15032 ·High transition frequency ·DC Current Gain Specified to 5.0 Amperes hFE = 50 (Min) @ IC =- 0.5 Adc hFE = 10 (Min) @ IC = -2.0 Adc APPLICATIONS ·Desi. nt MAX 2.5 62.5 UNIT /W /W www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off .
Part NumberMJE15033
DescriptionSILICON EPITAXIAL POWER TRANSISTORS
ManufacturerContinental Device India
Overview SYMBOL VALUE Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current Continuous Peak Base Current Power Dissipation TC=25ºC Derate Above 25ºC Power Dissipation TA. .