| Part Number | MJE8503 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is crit. ℃/W isc Product Specification MJE8503 isc website： 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJE8503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emit. |
MJE8503 Datasheet and Specifications PDF
The MJE8503 is a Silicon NPN Power Transistor.
| Part Number | MJE8503 Datasheet |
|---|---|
| Description | POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE8503A/D
Advance Information
MJE8503A*
*Motorola Preferred Device
SWITCHMODE™ Series
NPN Bipolar Power Transistor
The MJE8503A trans.
Peak (1) Collector Current * Continuous Collector Current * Peak Total Power Dissipation @ TC = 25°C @ TC = 100°C Derate above 25°C Operating and Storage Temperature Range Symbol VCEO(sus) VCES VCBO VEBO IC IB IBM PD Value 700 1500 1500 5.0 5.0 10 4.0 4.0 80 21 0.8 * 65 to +125 Unit Vdc Vdc Vdc Vdc . |
| Part Number | MJE8503 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for hig. BOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJE8503 isc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Col. |