| Part Number | MJL3281A Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz （TYP） ·Complement to Type MJL1302A ·Minimum Lot-to-Lot variations for robust device performance and reliable. Collector-Emitter Sustaining Voltage V(BR)EBO Emitter-Base Voltage VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain hFE-3 DC Current Gain hFE-4 DC Current Gain hFE-5 DC Current Gain h. |
MJL3281A Datasheet and Specifications PDF
The MJL3281A is a Silicon NPN Power Transistor.
| Part Number | MJL3281A Datasheet |
|---|---|
| Description | NPN Power Transistor |
| Manufacturer | onsemi |
| Overview |
Complementary Bipolar Power Transistors
MJL3281A (NPN) MJL1302A (PNP)
Features
Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High.
* Exceptional Safe Operating Area * NPN/PNP Gain Matching within 10% from 50 mA to 5 A * Excellent Gain Linearity * High BVCEO * High Frequency * These Devices are Pb *Free and are RoHS Compliant* Benefits * Reliable Performance at Higher Powers * Symmetrical Characteristics in Complementary Configur. |
| Part Number | MJL3281A Datasheet |
|---|---|
| Description | 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJL3281A/D
Designer's
Complementary NPN-PNP Silicon Power Bipolar Transistor
• The MJL3281A and MJL1302A are PowerBase power transistor.
perating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO VCEX IC IB PD TJ, Tstg Value 200 200 7 200 15 25 1.5 200 1.43 * 65 to +150 Unit Vdc Vdc Vdc Vdc Adc Adc Watts W/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (1) Pulse Test: Pulse Width = 5 ms,. |