| Part Number | MMBD2836LT1 |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD2835LT1/D
Monolithic Dual Switching Diodes
MMBD2835LT1 MMBD2836LT1
ANODE 3
CATHODE 1 2 CATHODE
1 2
3
MAXIMUM RATINGS (EACH DIOD.
ge Leakage Current (VR = 30 Vdc) (VR = 50 Vdc) Diode Capacitance (VR = 0 V, f = 1.0 MHz) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 50 mAdc) Forward Voltage (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) 1. FR * 5 = 1.0 0.75 2. Alumina = 0.4 0.3 MMB. |
MMBD2836LT1 Datasheet
The MMBD2836LT1 is a Monolithic Dual Switching Diodes.
| Part Number | MMBD2836LT1 |
|---|---|
| Description | MONOL LTHIC DUAL SWITCHING DIODE |
| Manufacturer | WEJ |
| Overview | RoHS MMBD2836LT1 MONOL LTHIC DUAL SWITCHING DIODE .,LTD1 2 SOT-23 3 ANODE-CATHODE 3 A L 3 K BS 1 ANODE 2 CATHODE 1 VG 2 D J C H COAbsolute Maximum Ratings Characteristic ICReverse Voltage . 10% t IF D50 INPUT TPULSE .,LGEMERATOR DUT 50 INPUT SAMPLING OSCILLOSCOPE 90% VR INPUT SIGNAL IR IR;RECI=10nA OUTPUT FULSE (IF=lR=10mA;MEASURED at iR(REC)=10mA) Notes.1.A 2.0K Variable resistor resistor adjusted for a Forward Current(lF) of 1C nA O2.Input pulse is adjused so IR(peak) is equ. |