| Part Number | MMBD6100LT1 Datasheet |
|---|---|
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBD6100LT1/D
Monolithic Dual Switching Diode
ANODE 1 2 ANODE
MMBD6100LT1
3 CATHODE
3 1
MAXIMUM RATINGS (EACH DIODE)
Rating Reverse .
urrent (VR = 50 Vdc) Forward Voltage (IF = 1.0 mAdc) (IF = 100 mAdc) Reverse Recovery Time (IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) (Figure 1) Capacitance (VR = 0 V) V(BR) IR VF 0.55 0.85 trr C * * 0.7 1.1 4.0 2.5 ns pF 70 * * 0.1 Vdc µAdc Vdc 1. FR * 5 = 1.0 0.75 2. Alumina = 0.4 0.3 0.062 in.. |
MMBD6100LT1 Datasheet and Specifications PDF
The MMBD6100LT1 is a Monolithic Dual Switching Diodes.
| Part Number | MMBD6100LT1 Datasheet |
|---|---|
| Description | Monolithic Dual Switching Diode |
| Manufacturer | onsemi |
| Overview | MMBD6100LT1 Monolithic Dual Switching Diode MAXIMUM RATINGS (EACH DIODE) Symbol VR IF IFM(surge) Reverse Voltage Forward Current Peak Forward Surge Current Rating Value 70 200 500 U. Publication Order Number: MMBD6100LT1/D MMBD6100LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 µAdc) Reverse Voltage Leakage Current (VR = 50 Vdc) Forward Voltage (IF = 1. |